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广播发射方案NXP BLF888500W RF公司的是功率晶体管,用于广播发射和工业应用在NXP BLF888500W LDMOSRF频带到可提供平均功率峰值包络功率功率增益UHF470MHz860MHz U0W,500W,漏极效率电压漏极静态电流本文主要介绍了19dB,46%,VDS50V,L3A BLF888主要特性和优势,类共源宽带放大器电路和元件列表以及布局图和元件布AB PCB局图A500W LDMOSRF powertransistor forbroadcast transmitter applications andindustrialapplications.The transistoris optimizedfor digitalapplicationsand candeliver110W averageDVB-T broadbandover thefull UHFbandfrom470MHz to860MHz.The excellentruggedness ofthis devicemakesit idealfor digitaltransmitterapplications.主要特性和优势BLF8882-Tone performanceat860MHz,a drain-source voltageVDS of50V andaquiescent draincurrent IDq=
1.3A:Peak envelopepower loadpower=500WPower gain=19dBDrain efficiency=46%Third orderintermodulation distortion=32dBcDVB performanceat858MHz,a drain-source voltageVDS of50V anda quiescentdraincurrent IDq=
1.3A:Average outputpower=110WPower gain=19dBDrain efficiency=31%Shoulder distance=31dBc
4.3MHz fromcenter frequencyIntegratedESD protectionAdvancedflange materialfor optimumthermal behaviorand reliabilityExcellentruggednessHigh powergainHigh efficiencyDesignedfor broadbandoperation470MHz to860MHzExcellent reliabilityInternalinput matchingfor highgain andoptimum broadbandoperationEasy powercontrolCompliant toDirective2002/95/EC,regarding Restrictionof HazardousSubstancesRoHS应用BLF888Communication transmitterapplications in the UHF bandIndustrial applicationsintheUHFband类共源宽带放大器元件列表:ABComponent DescriptionValue Remarks;B1,B2semi rigidcoax25Q
49.5mm EZ90-25-TPIIIC1multilayer ceramicchip capacitor12pF121C2C9,C10multilayer ceramicchip capacitor10pFtElC3multilayer ceramicchip capacitor
4.7pF111C
4.C
5.C6multilayer ceramicchip capacitor
8.2pFC7multilayer ceramicchip capacitor
5.6pFIllC8,C13,C14multilayer ceramicchip capacitor100pF121C11,C12multilayer ceramicchip capacitor
2.0pFComponent DescriptionValue RemarksC15,C16multilayer ceramicchip capaotor
4.7pF,50V TDKC4532X7R1E475MT020U orcapacitor of same qualityC图
17.C18multila类yer共cer源amic宽ch带ip c放apa大cito器r电路100pFlo BLF888ABmultiia*yer ceramicchip capacitor10uF.50V TDKC570X7R1H106KT0D0N orC
19.C20capacitorof samequalityC21,C22electrolytic capacitor;470nF63VC30,C31multilayer ceramicchip capaator10pF回C32nnjitikayer ceramicchip capacitor
5.6pF mC
33.C34C35multilayer ceramicchip capacrtor100pFrC
36.C37multilayer ceramicchip capacitor
4.7pF TDKC4532X7R1E475MT020U orcapacitorofsamequalitymicrostrlp HlWx L15mmx13mmL1•,W xL5mm x26mmL2microstrip HImicrostrip■HlL3,L32Wx L2mm x
49.5mmL4microstrip■Hl-13Wx L2mm x
9.5mmL5microstrip1-12W xL5mm»13mmL30microstrip1micfostrip一13Wx L2mm x11mmL311microstrip HlWx L2mm x3mmL33-R
1.R2resistor10nR3,R4resistor
5.6QR5,R6resistor100nR7,R8potentiometer1kQ132L30L250mm12LIrviETCL32105rvnWG1I]网+丫1,际图类共源宽带放大器布局图2AB PCB图类共源宽带放大器元件布局图3AB详情请见nxp.com/documents/data_sheet/BLF
888.pdf。