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Data SheetJuly1999File Number
2331.314A,500V,
0.400Ohm,N-Channel PowerOrdering InformationMOSFETFeaturesThis N-Channel enhancementmode silicongate powerfield•14A,500Veffect transistoris anadvanced powerMOSFET designed,•rDSON=
0.400Qtested,and guaranteedto withstanda specifiedlevel ofenergyin thebreakdown avalanchemode ofoperation.All of•Single PulseAvalanche EnergyRatedthese powerMOSFETs aredesigned forapplications suchas•SOA isPower DissipationLimitedswitching regulators,switching convertors,motor drivers,•Nanosecond SwitchingSpeedsrelay drivers,and driversfor highpower bipolarswitchingtransistors requiringhigh speedand lowgate drivepower.•Linear TransferCharacteristicsThese typescan beoperated directlyfrom integratedcircuits.•High InputImpedanceFormerly developmentaltype TA
17435.•Related Literature-TB334Guidelines for Soldering SurfaceMountComponents toPC Boards”SymbolPART NUMBERPACKAGE BRANDIRFP450TO-247IRFP450NOTE:When ordering,use theentire partnumber.DRAINTABPackagingJEDEC STYLETO-247SOURCEAbsolute Maximum Ratings Tc=25oC,Unless OtherwiseSpecifiedIRFP450UNITSDrain to Source Voltage Note
8.8APulsed Drain Current Note
1.44Single PulseAvalanche EnergyRating Note
0.063in
1.Tj=25to
125.Electrical SpecificationsTc=25oC,Unless OtherwiseSpecifiedPARAMETER SYMBOLTEST CONDITIONSMIN TYPMAX UNITSDrainto SourceBreakdown VoltageBVDSS ID=250pA,VGS=0V Figure10500--VGate ThresholdVoltageVGSTHVGS=VDS,ID=250pA
2.
04.0V-Zero GateVoltage DrainCurrentIDSS VDS=Rated BVDSS,VGS=ov--25pAVDS=
0.8x RatedBVDSS,VGS=0V,T=125C J250MA--On-State DrainCurrent Note2lDON VDSlDONX fDSONMAX,VGS=10V14--AGate toSource LeakageCurrent IGSSVGS=±20V--±100nAOn ResistanceNote2rDSON ID=
7.9A,VGS=1UV Figures8,
90.
30.4Q-Forward TransconductanceNote2VDS50V,ID=
7.9A Figure
129.
313.8Sgfs-Turn-On DelayTime tdONVDD=250V,ID-14A,VGS=10V,RGS=
6.1Q,=
17.4Q1627ns-MOSFET SwitchingTimes aretrRiseTime-4566nsEssentially Independentof OperatingTemperatureTurn-Off DelayTime tdOFF-68100nsFall Timetf4160ns-Total Gate Charge QgTOTVGS=10V,ID-14A,VDS=
0.8x RatedBVDSS82130nC-Gate toSource+Gate toDrain lGREF=
1.5mA Figure14GateChargeis EssentiallyIndependentof OperatingTemperatureGatetoSourceCharge Qgs-12-nCGate toDrain“Milled ChargeQgd42nC--VDS=25V,VGS=0V,f=1MHz Figure11Input CapacitanceClSS-2000-pFOutput CapacitanceCoss-400-PFReverse TransferCapacitanceCRSS-100-pFInternal DrainInductance LDMeasured fromthe ContactModified MOSFET
5.0nH一一Symbol ShowingtheScrew onHeader ClosertoInternal DeviceSourceand GatePins toInductancesCenterof DieInternalSource InductanceMeasured fromthe Source
12.5nHLSLead,
6.0mm
0.25in fromHeadertoSourceBondingPad°C/WThermal Resistance,Junction toCase ROJC--
0.70，C C/I AThermalResistance,Junction toAmbient ROJAFree AirOperation30C/W--Source toDrain DiodeSpecificationsPARAMETER SYMBOLTEST CONDITIONSMIN TYPMAX UNITSModifiedMOSFET SymbolContinuousSource toDrainCurrentISD--14AShowing theIntegral ReversePulseSource toDrainCurrentNote356AISDMP-N JunctionRectifier R二Source toDrain DiodeVoltageNote2℃
1.4VVSD Tj=25,1=14A,VGS=OV Figure13--Reverse RecoveryTime trr-1300-nsTj=150°C,1口=13A,dlSD/dt=100A/ps anReverseRecovery ChargeQRRTj=150℃,=13A,dlSD/dt=100A/s-
7.4-PCMNOTES:
2.Pulse test:pulse width300ps,duty cycle2%.
3.Repetitive rating:pulse widthlimited byMax junctiontemperature.See TransientThermal Impedancecurve Figure
3.
4.VDD=50V,starting Tj=25也，L=
7.9mH,R Q=25Q,peak IAS=14A.Typical PerformanceCurvesUnless OtherwiseSpecified江〃山比一山025507510012515050100150TC,CASE TEMPERATURE°CTC,CASE TEMPERATURE°CFIGURE
1.NORMALIZED POWERDISSIPATION vsCASE FIGURE
2.MAXIMUM CONTINUOUSDRAIN CURRENTvsTEMPERATURE CASETEMPERATURE■
0.2山巨dw-
0.1山hi■
0.05・
0.
02.
0.01二SINGLEt1,RECTANGULAR PULSEDURATION sFIGURE
3.MAXIMUM TRANSIENTTHERMAL IMPEDANCE
1.
1.
0.
0.
0.
0.No_lvd_ss_ahModaqNOJUo4lNulnsN_vya-a-1152963Typical PerformanceCurvesUnless OtherwiseSpecified Continued20103[―一VG；S=10V PUDU LSEDURAT ON=80pSOPERATION INTHISAREA ISLIMITED BYI VGS=
6.0V ITYCYCLE=
0.5%MAXrDSON16i102I_I-in VGS=
5.5VnMBBI-山MBI山L Ba128r芝nNNn10BCra4_VGS=
5.0VI__10ms0VGS=
4.5VDC-I__TJ=MAX RATEDwGS=
4.0VSINGLE PULSE[__110050100150200250VDS,DRAIN TO SOURCE VOLTAGEV VDS,DRAIN TO SOURCE VOLTAGEVFIGURE
4.FORWARD BIASSAFE OPERATINGAREA FIGURE
5.OUTPUT CHARACTERISTICS102in山比比nN_vya.a_10-20246810VDS,DRAIN TOSOURCE VOLTAGEVVGS,GATE TOSOURCE VOLTAGEVFIGURE
6.SATURATION CHARACTERISTICSFIGURE
7.TRANSFER CHARACTERISTICSPULSEDURATION=2ps
3.0山DUTY CYCLE=
0.5%MAX VGS=10V i7VGS=20V PULSEDURATION=80ps DUTYNVLS_Ss山山比CYCLE=
0.5%MAX VGS=10V,SN41S NOID=
7.9A/山山
2.4MS，N
0.No/sa」oiN_
1.8vya///
1.2/4NO
0.6一
0.30010203040506070-b,DRAIN CURRENTA4T,JUNCTION TEMPERATURE°C J004080120160NOTE:Heating effectof2ps isminimal.FIGURE
9.NORMALIZED DRAIN TOSOURCE ONFIGURE
8.DRAIN TOSOURCEONRESISTANCE vs GATE RESISTANCEvs JUNCTION TEMPERATUREVOLTAGE ANDDRAIN CURRENTa-6QS-Z4aws-.
0.
0.
0.
0.
0.
04.
5.
6.
78.
9.naaJUNL,s0±-zsonrQNoawqnzJUaTypical PerformanceCurvesUnless OtherwiseSpecified Continued山山NMOaxq山山oi二Nosa」Tj,JUNCTIONTEMPERATURE℃FIGURE
10.NORMALIZED DRAINTOSOURCEBREAKDOWN FIGURE
11.CAPACITANCE vsDRAINTOSOURCE VOLTAGEVOLTAGEvs JUNCTIONTEMPERATUREonFIGURE
12.TRANSCONDUCTANCE vsDRAIN CURRENTFIGURE
13.SOURCE TODRAIN DIODEVOLTAGE20lD=14A山anos50100Qg,GATE CHARGEnCFIGURE
14.GATE TOSOURCE VOLTAGEvsGATE CHARGE555555o7o89o011211Nmoaasqnzwa•«■•a•sonaoAonqDC04081021648261106HOdrLdodnNoTest Circuitsand WaveformsFIGURE
15.UNCLAMPED ENERGYTEST CIRCUITFIGURE
16.UNCLAMPED ENERGYWAVEFORMSFIGURE
17.SWITCHING TIMETEST CIRCUITFIGURE
18.RESISTIVE SWITCHINGWAVEFORMSVDSIGREFSAMPLING-SAMPLINGRESISTOR RESISTORFIGURE
19.GATE CHARGETEST CIRCUITFIGURE
20.GATECHARGEWAVEFORMSslAll Intersil semiconductor products are manufactured,assembled andtested underIS09000quality systemscertification.Intersilsemiconductorproductsaresold bydescription only.Intersil Corporationreserves theright tomake changesin circuitdesign and/or specificationsat anytime withoutnotice.Accordingly,the readeris cautionedto verifythat datasheets arecurrent beforeplacing orders.Information furnishedby Intersilis believedto beaccurate andreliable.However,noresponsibility isassumedby Intersil or its subsidiaries forits use;nor forany infringementsof patentsor otherrights ofthird partieswhich mayresult fromits use.Nolicense isgranted byimplication orotherwise underany patentor patentrights ofIntersiloritssubsidiaries.For informationregarding IntersilCorporation andits products,see websiteSales OfficeHeadquartersNORTH AMERICAEUROPE ASIAIntersilCorporation IntersilSA IntersilTaiwan Ltd.P O.Box883,Mail Stop53-2047F-6,No.101Fu HsingNorth RoadMelbourne,FL32902Taipei,TaiwanTEL:407724-7000Republic ofChinaFAX:407724-7240TEL:886227169310FAX:886227153029。
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