常用芯片资料——M25P80

M25PXX512Kbit to32Mbit,Low Voltage,Serial FlashMemory With40MHz or50MHz SPIBus InterfaceDATABRIEFFEATURES SUMMARY512Kbit to32Mbit ofFlash MemoryPage Program upto256Bytes in

1.4ms typicalSectorErase256Kbit or512KbitBulk Erase512Kbit to32Mbit

2.7to

3.6V SingleSupply VoltageSPIBus CompatibleSerial Interface40MHz to50MHz ClockRate maximumDeepPower-down Mode1pA typicalElectronicSignaturesJEDEC StandardTwo-Byte Signature20xxh一-RES Instruction,One-Byte,Signature,forbackward compatibilityMorethan100000Erase/Program Cyclesper SectorMorethan20Year DataRetentionTable

1.Product ListReferencePart NumberM25P32M25P16M25P80M25P40M25PxxM25P20M25P10-AM25P05-AFor further information contactyour localST salesoffice.SUMMARY DESCRIPTIONFigure

3.SO8and VDFPNConnectionsThe M25Pxx isa512Kbit to32Mbit2M x8SerialFlash Memory,with advancedwrite protectionmechanisms,accessed bya highspeed SPI-com-patible bus.The memory can beprogrammed1to256bytes atatime,using thePage Programinstruction.The memoryis organizedas anumber ofsectors,each containing256or128pages.Each pageis256bytes wide.The wholememorycanbe erasedusing theBulkErase instruction,or asector ata time,using theSectorErase instruction.Figure

2.Logic Diagrammustnot beallowed to be connectedto anyother voltageorsignal lineon thePCB.Figure

4.SO16ConnectionsM25Pxx□HOLD16C□VCC15DDU14□DUAl10258DU13□DUDU12□DUDU11□DUS10□VTable

2.Signal NamesQ9□-SScSerial ClockWA110260D Serial Data InputQSerialDataOutput Note:

1.DU二Dont UsesChipSelectw WriteProtectHOLD HoldVccSupply VoltageVssGroundFigure

5.Block DiagramHOLD►High VoltageW1Control LogicGeneratorI/O ShiftRegisterAddress Register256Byte StatusandCounter DataBuffer RegisterIbpof AddressSpaceSize oftheread-onlymemory areaOOOOOhOOOFFh256Bytes PageSizeX DecoderAI10261Table

3.Instruction SetAddressDummy Data BytesInstruction DescriptionOne-byte InstructionCode BytesBytesWREN WriteEnable0000011006h000WRDI WriteDisable0000010004h000RDID ReadIdentification100111119Fh001to3RDSR ReadStatus Register0000010105h001tO ooWRSRWrite Status Register0000000101h001READ ReadData Bytes0000001103h31to OO0FAST_READ ReadDataBytesat HigherSpeed00001011OBh311tO ooPPPageProgram0000001002h301to256SE SectorErase11011000D8h300BE BulkErase11000111C7h000DP Deep Power-down10111001B9h000Release fromDeep Power-down,and ReadElectronic Signature031tO ooRES10101011ABhRelease fromDeepPower-down000Table

4.StatusRegisterFormatPART NUMBERINGTable

5.Ordering InformationSchemeExample:M25P80-V MP6T PDeviceTypeM25P=Serial FlashMemory forCode StorageDeviceFunction32=32Mbit4M x816=16Mbit2M x880=8Mbit1Mx840=4Mbit512Kx820=2Mbit256K x810-A=1Mbit128Kx805-A=512Kbit64Kx8Operating VoltagePackageME=VDFPN88x6mm MLP8MP=VDFPN8MLP8MF=SO16300mil widthMN=SO8150mil widthDeviceGrade6=Industrial temperaturerange,-40to85℃.Device testedwith standardtest flow3=Device testedwith HighReliability CertifiedFlow

1.Automotive temperaturerange-40to125℃Optionblank=Standard PackingT=Tape andReel PackingPlatingTechnologyblank=Standard SnPbplatingP=Lead-Free andRoHS compliantG=Lead-Free,RoHS compliant,Sb2O3-free andTBBA-freeNote:

1.ST stronglyrecommends theuse ofthe AutomotiveGrade devicesfor usein anautomotive environment.The HighReliability CertifiedFlowHRCF isdescribed inthe qualitynote QNEE

9801.Please askyour nearestST salesoffice fora copy.For alist ofavailable optionsspeed,package,device,please contactyour nearestST SalesOf-etc.or forfurtherinformationon anyaspect ofthis fice.REVISION HISTORYTable

6.Document RevisionHistoryDate Rev.Description ofRevision08-0ct-2004First release

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