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□IXYSStandard PowerMOSFET IRFP250VDSS=200V^Dcont D=30A^DSfon=85mQN-Channel EnhancementModeSymbol TestConditions MaximumRatingsTO-247AD℃℃Tj=25to150200VVDSS℃℃VDGR Tj=25to150;RGS=1MQ200VContinuous±20VVGSVGSM Transient±30V℃T=2530AID25c℃IDM Tc=25,pulse widthlimited byTJM120AIAR30A℃EAR Tc=2519mJdv/dt ldi/dt100A/pS,T150℃,R5V/nss IDM,VDDVDSS,2Q「=Tc=25℃190WPD℃TJ-
55...+150℃TJM150℃T-
55...+150stgFeaturesM Mountingtorque
1.13/10Nm/lb.in.d•Internationalstandardpackage JEDECWeight6gTO-247AD℃•Low F%sonHDMOS™process300Maximumleadtemperatureforsoldering•Rugged polysilicongate cell structure
1.6mm
0.062in.from casefor10s•Highcommutatingdv/dtrating•Fast switchingtimesSymbol TestConditions aracteristicValues ApplicationsCh;i sespecified•Switch-modeandresonant-modeTj=25℃,unless min.therwi max.powersuppliestyp-•Motorcontrols=0V,200VVDSS VGSID=250MA•UninterruptiblePowerSuppliesUPSV GSthVDS=V I=250MA24V DCchoppers=±20=0±100nAIGSS VGSVDC,VDS・℃Advantagesv,=
0.8V T=25IDSS nn《25pAL/O J℃V=0V T,=125250pAr•Easy tomount with1screw isolatedooJmounting screwhole^Dson V
0.085QGS=10V,I D=18A•Space savingsPulsetest,t300ps,duty cycled2%•HighpowerdensityIXYS reservesthe rightto changelimits,test conditions,and dimensions.92602E5/96Symbol TestConditions CharacteristicvaluesTO-247AD Outline℃Tj=25,unless otherwisespecifiedmin.typ-max.gfs VDS=10V;ID=18A,pulse test12S2970530pF pFpF=0V,V=25V,f=1MHz VGSDS180CossCrss J29nstdon130ns
6.2Q,ExternalVGS=10V,VDS=100V,I=30A RG=:Dldoff I110ns Terminals:1-Gate2-Drain3-，J SourceTab-Drain98nsDim.Millimeter Inches3Min.Max.Min.Max.106140gonnC nCA
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6.15BSC242BSCIs VGS=0V30AISM Repetitive;pulse widthlimited byTJM120AI=l,V=0V,F SGSVSD Pulsetest,t300ps,duty cycled2%
1.8Vtrr lF=ls,-di/dt=100A/ps,V R=100V360nsIXYSMOSFETS andIGBTsarecovered byoneor moreofthefollowing U.S.patents:2-24,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。
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