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.a截止频率alphacutofffrequency.禁带变窄bandgapnarrowing.基区渡越时间basetransittime.基区输运系数basetransportfactor.基区宽度调制效应basewidthmodulation.4截止频率betacutofffrequency.集电结电容充电时间collectorcapacitancechargingtime.集电结耗尽区渡越时间collectordepletionregiontransittime.共基极电流增益common-basecurrentgain.共放射极电流增益common-emittercurrentgain.电流集边currentcrowding.截止频率cutofffrequency.厄尔利电压earlyvoltage.£-8结电容充电时间emitter-basejunctioncapacitancechargingtime.放射极注入效率系数emitterinjectionefficiencyfactor.正向有源forwardactive.反向有源inverseactive.输出电导outputconductance.积累层电荷accumulationlayercharge.体电荷效应bulkchargeeffect.沟道电导channelconductance.沟道电导调制channelconductancemodulation.互补金属氧化物半导体CMOS.耗尽型MOS场效应管depletionmodeMOSFET.增加型MOS场效应管enhancementmodeMOSFET.平带电压flat-bandvoltage.栅电容充电时间gatecapacitancechargingtime.界面态interfacestate.反型层电荷inversionlayercharge.反型层迁移率inversionlayermobility.闩锁latch-up.最大空间电荷区宽度maximuminducedspacechargewidth.金属-半导体功函数差metal-semiconductorworkfunctiondifference.临界反型moderateinversion.栅氧化层电容oxidecapacitance.饱和saturation.强反型stronginversion.阀值反型点thresholdinversionpoint.阀值电压thresholdvoltage.跨导transconductance.弱反型weakinversion.沟道长度调制channellengthmodulation.热电子hotelectrons.轻掺杂漏lightlydopeddrain.窄沟道效应narrow-channeleffects.源漏穿通nearpunch-through.短沟道效应short-channeleffects.寄生晶体管击穿snapback.亚阀值电导subthresholdconduction.表面散射surfacescattering.耗尽型结型场效应管depletionmodeJFET.增加型结型场效应管enhancementmodeJFET.夹断pinchoff.发光二极管LEDlightemittingdiode.瞬时间电流promptphotocurrent.半导体可控整流器SCRsemiconductorcontrolledrectifier.半导体闸流管thyristor.三端双向可控硅开关元件triac。